发明名称 |
Selective Epitaxial Growth of Semiconductor Materials with Reduced Defects |
摘要 |
A semiconductor device includes a substrate formed of a first semiconductor material; two insulators on the substrate; and a semiconductor region having a portion between the two insulators and over the substrate. The semiconductor region has a bottom surface contacting the substrate and having sloped sidewalls. The semiconductor region is formed of a second semiconductor material different from the first semiconductor material. |
申请公布号 |
US2013087831(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201213686708 |
申请日期 |
2012.11.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, L;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN JING-CHENG;YU CHEN-HUA |
分类号 |
H01L21/02;H01L29/165;H01L29/267 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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