| 摘要 |
The present invention provides a power converter including a power semiconductor device, a driver circuit section that outputs a driving signal for driving the power semiconductor device, a buffer circuit section that includes a PNP transistor and an NPN transistor and that outputs a gate voltage for driving the power semiconductor device, a first delay circuit section that receives the driving signal and that generates a first delay signal on the basis of the received driving signal, a first MOSFET that has a drain electrode connected with the output of the buffer circuit section and that is driven on the basis of the first delay signal. A current flows through the buffer circuit section and the first MOSFET on the basis of the received driving signal, the first delay circuit section outputs the first delay signal after the buffer circuit section exits the transient state and turns on, and the gate voltage is applied to the power semiconductor device from the buffer circuit section to turn the power semiconductor device on by the switching operation of the first MOSFET based on the first delay signal. |
