| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high efficiency, a wafer, a method of manufacturing the semiconductor light-emitting element, and a method of manufacturing the wafer. <P>SOLUTION: The semiconductor light-emitting element includes an n-type first layer, a p-type second layer, a light-emitting part provided between the first layer and the second layer, a first stacked structure provided between the first layer and the light-emitting part, and a second stacked structure provided between the first layer and the first stacked structure. The light-emitting part includes a plurality of barrier layers and well layers provided between the plurality of barrier layers. The first stacked structure includes a plurality of third layers that contain a nitride semiconductor, and a plurality of fourth layers that are alternately stacked with the plurality of third layers and contain GaInN having a thickness thinner than that of the well layers. The second stacked structure includes a plurality of fifth layers that contain a nitride semiconductor having a different composition from that of the third layers, and a plurality of sixth layers that are alternately stacked with the plurality of fifth layers and contain GaInN having a thickness thinner than that of the well layers. <P>COPYRIGHT: (C)2013,JPO&INPIT |
