INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD

摘要

PURPOSE: An insulated gate bipolar transistor and a manufacturing method thereof are provided to improve an operation property by reducing a voltage drop of an on state. CONSTITUTION: An N-type drift region(120) is formed on the upper side of a substrate(110). A P layer(122) is formed in the N-type drift region and includes at least one floating island structure. A top terminal includes an emitter and a gate on the upper side of the N-type drift region. A bottom terminal includes a collector on the lower side of the substrate. [Reference numerals] (130) Gate; (AA) Emitter; (BB) Collector;