NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE AND NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor electronic device which can reduce channel leakage.

SOLUTION: A heterojunction transistor 11 includes a current block layer 27 having p-type conductivity. Because a doped semiconductor layer 17 is provided on a lateral face 16a of an opening 16 and the doped semiconductor layer 17 is provided between the current block layer 27 and the channel layer 19, the channel layer 19 does not directly contact a semiconductor including donor defect likely of being formed on the lateral face 16a of the opening 16 in etching. Further because the doped semiconductor layer 17 is provided between the current block layer 27 and the channel layer 19, and the channel layer 19 is provided between a carrier supply layer 21 and the doped semiconductor layer 17, addition of the doped semiconductor layer 17 does not cause a change in an arrangement of the channel layer 19 and the carrier supply layer 21.

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