| 发明名称 |
Compound semiconductor device and manufacturing method therefor |
| 摘要 |
<p>A compound semiconductor device includes a compound semiconductor laminated structure (2), a passivation film (6) formed on the compound semiconductor laminated structure and having a through-hole (6a), and a gate electrode (7) formed on the passivation film so as to plug the through-hole. A grain boundary (101) between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.</p> |
| 申请公布号 |
EP2575178(A2) |
申请公布日期 |
2013.04.03 |
| 申请号 |
EP20120176977 |
申请日期 |
2012.07.18 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
OKAMOTO, NAOYA;MAKIYAMA, KOZO;MINOURA, YUICHI;OHKI, TOSHIHIRO;OZAKI, SHIROU;MIYAJIMA, TOYOO |
| 分类号 |
H01L29/778;H01L21/285;H01L23/29;H01L23/31;H01L29/20;H01L29/423;H01L29/43;H01L29/47;H01L29/872 |
主分类号 |
H01L29/778 |
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