Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
摘要
Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
申请公布号
US8409895(B2)
申请公布日期
2013.04.02
申请号
US201113036273
申请日期
2011.02.28
申请人
ZHU MINGWEI;AGRAWAL VIVEK;PATIBANDLA NAG B.;NALAMASU OMKARAM;APPLIED MATERIALS, INC.
发明人
ZHU MINGWEI;AGRAWAL VIVEK;PATIBANDLA NAG B.;NALAMASU OMKARAM
