| 摘要 |
<p>PURPOSE: An organic light emitting diode display and a method for manufacturing the same are provided to improve the reliability and the property of a transistor. CONSTITUTION: A buffer layer(110) is formed on a substrate(100). A thin film layer(115) is patterned on the buffer layer. A first gate insulating layer(120) is overlapped with the thin film layer. An active layer(102) is formed in the first gate insulating layer. A second gate insulating layer(130) is formed on the active layer. A gate electrode(104) is overlapped with the second gate insulating layer. A source and a drain electrode(106,108) are formed on the gate electrode.</p> |
