| 摘要 |
A method for fabricating an integrated circuit device is provided. In one embodiment, the method includes providing a substrate. A first photolithography process is performed to define a first pattern on the substrate. The first pattern includes a first trench segment. A second photolithography process is performed which defines a second pattern on the substrate. The second pattern includes a second trench segment. The second trench segment includes an overlap area with the first trench segment. The embodiment of the method further includes etching the substrate according the first and second patterns; the etching includes forming a via hole defined by the overlap area. The first trench segment, second trench segment, and via hole may be used to form a dual damascene interconnect structure. |
