METHOD FOR FABRICATION OF A BACK SIDE CONTACT SOLAR CELL

摘要

Method for fabrication of a back side contact solar cell comprising the steps of simultaneously diffusing a phosphorous dopant on at least part of the front side and at least part of the back side of a crystalline silicon substrate (101), thereby forming a front phosphorous diffusion region (201) and a back phosphorous diffusion region (203) with the same diffusion depth and phosphosilicate glass layers (202, 204) on the front and back phosphorous diffusion regions (201, 203), respectively; forming a first dielectric coating film (305) on at least part of the back side of the substrate; removing at least part of the front-side phosphosilicate glass layer (202); and heating the product thus obtained for a period of time and at a temperature chosen in such a way that said front and back phosphorous diffusion regions (201, 203) expand further into the crystal up to a second diffusion depth that is different for the front phosphorous diffusion region (201A) and the back phosphorous diffusion region (203A), respectively, after the heating.