| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device forming a pad having a thickness which is equal to or thicker than a predetermined value with a small number of processes. <P>SOLUTION: According to this invention, an aluminum layer 22 is deposited above an interlayer insulation film 1 formed on a semiconductor substrate. An aluminum layer 24 is deposited on the aluminum layer 22. A photo-resist 7 is formed above the aluminum layer 24 of a pad region 102. Etching is performed by using the photo-resist 7 and thereby forming a pad upper layer 52 at the pad region 102 and removing the aluminum layer 24 of a wiring region 101. Then, a photo-resist 8 is formed so as to cover the pad upper layer 52 of the pad region 102 and form a wiring pattern at the wiring region 101. Etching is performed using the photo-resist 8 and thereby forming a pad lower layer 51 at the pad region 102 and forming wiring 2 at the wiring region 101. <P>COPYRIGHT: (C)2013,JPO&INPIT |
