SUPERCRITICAL DRYING METHOD OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a supercritical drying method of a semiconductor substrate which inhibits a metal material and polysilicon on the semiconductor substrate from being etched and prevents the deterioration of electric characteristics of a semiconductor device.

SOLUTION: A supercritical drying method of a semiconductor substrate includes the steps of: introducing the semiconductor substrate having a surface wetted with a water soluble organic solvent into a chamber after the semiconductor substrate is cleaned and rinsed; sealing the chamber and putting the water soluble organic solvent in the supercritical state; lowering the pressure in the chamber and changing the water soluble organic solvent in the supercritical state into a gas to discharge the water soluble organic solvent from the chamber; supplying an inactive gas into the chamber as the pressure in the chamber is lowered to the atmospheric pressure; and cooling the semiconductor substrate.

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