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发明名称
Verfahren zum Auftragen einer Schicht aus Germaniumdioxyd tetragonaler Kristallstruktur auf einen Germaniumkoerper und nach diesem Verfahren hergestellter Koerper
摘要
申请公布号
DE1521670(A1)
申请公布日期
1970.02.05
申请号
DE19651521670
申请日期
1965.10.27
申请人
ASSOCIATED SEMICONDUCTOR MANUFACTURES LTD.
发明人
GEORGE WILKES,JOHN
分类号
H01L23/29
主分类号
H01L23/29
代理机构
代理人
主权项
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