| 摘要 |
A fabricating method and a testing method of a semiconductor device and a mechanical integrity testing apparatus are provided. An object includes a wafer, an insulating layer, and a plurality of conductive posts is provided. A surface of the wafer has a plurality of first blind holes outside chip regions and a plurality of second blind holes inside the chip regions. The insulating layer is between the conductive posts and the walls of the first blind holes and between the conductive posts and the walls of the second blind holes. A mechanical integrity test is performed to test a binding strength between the insulating layer, the conductive posts, and the walls of the first blind holes. The conductive posts in the chip regions are electrically connected to an element after the conductive posts in the first blind holes are qualified in the mechanical integrity test.
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