发明名称 |
METHOD OF MANUFACTURING SUBSTRATE |
摘要 |
PURPOSE: A method for manufacturing a substrate is provided to improve the flatness of a wafer and prevent spots or scratches by applying a wet etching process. CONSTITUTION: An ingot is sliced into a substrate(S110). Both sides of the substrate are lapped(S120). The substrate with lapped sides is wet-etched with etchant(S130). The rear of the wet-etched substrate is sandblasted(S140). The sandblasted substrate is wet-etched with the etchant(S150). The edges of the wet-etched substrate are processed(S160). The front of the substrate with the processed edges is polished(S170). [Reference numerals] (AA) Start; (BB) End; (S110) Slicing; (S120) Lapping both sides; (S130,S150) Etching; (S140) Sandblasting(-surface sandblasting); (S160) Processing an edge; (S170) Polishing a pad section
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申请公布号 |
KR20130027220(A) |
申请公布日期 |
2013.03.15 |
申请号 |
KR20110090678 |
申请日期 |
2011.09.07 |
申请人 |
HANSOL TECHNICS INC. |
发明人 |
SUH, MAHN HA;KOO, YOUNG HOI;SHIM, JAE GUE;PARK, JI HWAN;LEE, KYOUNG HO |
分类号 |
H01L21/304;H01L21/306 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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