| 摘要 |
<p>Heat treating a thin walled component of a curable hypoeutectic aluminum-silicon casting alloys according to T6 method (solution heat treating and artificially aging) or T7 method (solution heat treating and stabilizing), comprises solution annealing and quenching the component, heating in a heating phase during a predetermined heating time at predetermined heat treatment temperature, and artificially aging in a holding phase for a predetermined dwell time at predetermined heat treatment temperature. The average rate of heating of component is not > 20 K/minute, preferably not > 10 K/minute. Heat treating a thin walled component of a curable hypoeutectic aluminum-silicon casting alloys according to T6 method (solution heat treating and artificially aging) or T7 method (solution heat treating and stabilizing), comprises solution annealing and quenching the component, heating in a heating phase during a predetermined heating time at a predetermined heat treatment temperature, and artificially aging in a holding phase for a predetermined dwell time at the predetermined heat treatment temperature. The average rate of heating of the component during the heating phase of the thermal aging is not > 20 K/minute, preferably not > 10 K/minute. An independent claim is also included for a component of a curable hypoeutectic aluminum-silicon casting alloys, which is heat-treated by the above mentioned method.</p> |
