| 摘要 |
<p>In this solid-state image pickup device, a pixel has a first island-like semiconductor section (P11) formed on a substrate (1), and a drive output circuit has second island-like semiconductor sections (4a-4c), which are formed on the substrate with a height same as that of the first island-like semiconductor section (P11). The first island-like semiconductor section (P11) has a first gate insulating layer (6b) formed on the outer circumference of the first island-like semiconductor section, and a first gate conductor layer (105a) that surrounds the first gate insulating layer (6b). The second island-like semiconductor sections (4a-4c) have a second gate insulating layer (6a) formed on the outer circumference of the second island-like semiconductor sections, and a second gate conductor layer (7a) that surrounds the second gate insulating layer (6a). The first gate conductor layer (105a) and the second gate conductor layer (7a) have respective bottom portions positioned on a same plane.</p> |
