CRYSTALLIZATION METHOD AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME

摘要

PURPOSE: A crystallizing method and a method for manufacturing a display device using the same are provided to prevent silicide between an amorphous silicon thin film and a heat transfer layer by processing the surface of the amorphous silicon thin film with N2O plasma before a crystallization process. CONSTITUTION: A buffer layer(120) is formed on a substrate(100). An amorphous silicon thin film(130a) is formed on the buffer layer. The surface of the amorphous silicon thin film is processed with N2O plasma. Hydrogen is removed from the amorphous silicon thin film. A heat transfer layer(140) is formed on the amorphous silicon thin film.