FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
摘要
The present application relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to the adjustment of a displacement current, and to a method for manufacturing the ferroelectric memory device.
申请公布号
WO2013032257(A2)
申请公布日期
2013.03.07
申请号
WO2012KR06966
申请日期
2012.08.31
申请人
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION;NOH, TAE WON;LEE, DAESU;YOON, JONG-GUL
