DATA READ CIRCUIT, NONVOLATILE MEMORY DEVICE HAVING THE SAME AND METHOD FOR READING DATA OF NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A data read circuit, a nonvolatile memory device including the same, and a method for reading data in the nonvolatile memory device are provided to improve the reliability of read data by using a plurality of reference voltages. CONSTITUTION: A cell array includes nonvolatile memory cells. A bit line is connected to the nonvolatile memory cell and transmits a data voltage(VSA). A sense amplifier circuit(1151) receives a data voltage through a first input unit and receives two reference voltages(VREFH,VREFL) through a second input unit. The sense amplifier circuit generates read data by differentially amplifying input signals inputted to the first and second input units in a data read operation.