发明名称 Photodiode array, method of manufacturing the same, and radiation detector
摘要 A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of photodiodes (4) are formed in array form on a surface at a side of an n-type silicon substrate (3) onto which light to be detected is made incident and penetrating wirings (8), which pass through from the incidence surface side to the back surface side, are formed for the photodiodes (4), the photodiode array (1) is arranged with a transparent resin film (6), which covers the formed regions of the photodiodes (4) and transmits the light to be detected, provided at the incidence surface side.
申请公布号 US8389322(B2) 申请公布日期 2013.03.05
申请号 US20100656175 申请日期 2010.01.20
申请人 SHIBAYAMA KATSUMI;HAMAMATSU PHOTONICS K.K. 发明人 SHIBAYAMA KATSUMI
分类号 G01T1/20;H01L21/00;H01L27/146;H01L31/09;H01L31/10 主分类号 G01T1/20
代理机构 代理人
主权项
地址