| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which easily adjusts a temperature of a peripheral part of a wafer. <P>SOLUTION: A placement base 11 on which a substrate W to be subject to plasma processing is placed comprises: a placement base body 12 temperature-adjusted to a predetermined temperature; and an electrostatic chuck 13 placed on the placement base body 12 and used for attracting the substrate W. On an upper surface of the electrostatic chuck 13, a first heat transmission gas diffusion region 47 disposed at a center of the upper surface, and a second heat transmission gas diffusion region 48 disposed at a peripheral part are formed. A plasma processing apparatus includes a first heat transmission gas supply part 51 supplying a heat transmission gas to the first heat transmission gas diffusion region 47 and a second heat transmission gas supply part 52 supplying the heat transmission gas to the second heat transmission gas diffusion region 48. Cooling performance is arbitrarily set and separately controlled for the first heat transmission gas diffusion region 47 and the second heat transmission gas diffusion region 48. The second heat transmission gas diffusion region 48 is an annular recessed part formed at the peripheral part of the upper surface of the electrostatic chuck 13. <P>COPYRIGHT: (C)2013,JPO&INPIT |
