| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device manufacturing method of a silicon carbide semiconductor which can implant impurity ions in a silicon carbide substrate via a film for adjusting an ion implantation depth and inhibit the occurrence of detachment on the silicon carbide substrate. <P>SOLUTION: A manufacturing method of a silicon carbide semiconductor device prepares a silicon carbide substrate 90 having a surface SO, forms a coating film 50 made from a first material directly on the surface SO of the silicon carbide substrate 90, forms a mask layer 31 made from a second material having lower adhesion to a silicon carbide in comparison with the first material on the coating film 50, forms a first opening P1 in the mask layer 31, and implants first impurity ions for providing a first conductivity type by ion beams J1 which pass the first opening P1 of the mask layer 31 and penetrate the coating film 50, in the silicon carbide substrate 90. <P>COPYRIGHT: (C)2013,JPO&INPIT |
