发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 A non-volatile semiconductor memory device includes: a power supply unit; a memory cell array powered on or off by the power supply unit; and a read unit for reading data recorded on the memory cell array, wherein the data recorded on the memory cell array is not read in response to a control signal, when the memory cell array is powered on or off.
申请公布号 US2013051132(A1) 申请公布日期 2013.02.28
申请号 US201213585449 申请日期 2012.08.14
申请人 SON JONG-PIL;SAMSUNG ELECTRONICS CO., LTD. 发明人 SON JONG-PIL
分类号 G11C11/16 主分类号 G11C11/16
代理机构 代理人
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