| 发明名称 |
METHOD FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS |
| 摘要 |
Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.
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| 申请公布号 |
US2013048937(A1) |
申请公布日期 |
2013.02.28 |
| 申请号 |
US201113219806 |
申请日期 |
2011.08.29 |
| 申请人 |
TONG JINHONG;HIGUCHI RANDALL;HASHIM IMRAN;GOPAL VIDYUT;INTERMOLECULAR, INC. |
发明人 |
TONG JINHONG;HIGUCHI RANDALL;HASHIM IMRAN;GOPAL VIDYUT |
| 分类号 |
H01L45/00;H01L21/02 |
主分类号 |
H01L45/00 |
| 代理机构 |
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