NONVOLATILE MEMORY ELEMENT AND MEMORY DEVICE INCLUDING THE SAME

摘要

PURPOSE: A nonvolatile memory element and a memory device including the same are provided to increase data stored per unit area by including a multi-bit memory property. CONSTITUTION: A nonvolatile memory element includes a first electrode(E1), a second electrode(E2), and a memory layer(M1). The second electrode is separated from the first electrode. The memory layer is formed between the first electrode and the second electrode and includes a base layer and an ionic species exchange layer. The memory layer has a resistance change property by moving ionic species(20). The ionic species exchange layer has a multilayer structure including two layers.