| 摘要 |
An apparatus for heating a semiconductor film is provided to enhance the crystalline of an amorphous silicon film by improving structure of a preheating part, an inductive core and an inductive coil or installing a preheating part for a substrate. An apparatus(300) for heating a semiconductor film(305) includes a chamber, a substrate fixing part(309), a preheating part(311,313), and a magnetic inductive part(314,316). The substrate fixing part(309) fixes a substrate which is supplied into the chamber. The preheating part(311,313) preheats the substrate. The magnetic inductive part(314,316) crystallizes the semiconductor film(305) by induced-heating with the inductive magnetic field. The magnetic inductive part(314,316) comprises an inductive core and an inductive coil. A preheating part for the substrate is installed for preheating the semiconductor film(305) in a separate chamber before transferring the substrate to the chamber for crystallizing the semiconductor film(305). |
