发明名称 |
METHOD FOR INHIBITING GROWTH OF INTERMETALLIC COMPOUND |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for controlling the growth of an intermetallic compound formed by a rapid reaction of a solder and Cu prior to a bonding process and inhibiting the growth of the intermetallic compound after the bonding process. <P>SOLUTION: A method for inhibiting the growth of an intermetallic compound includes: (i) a step of preparing a substrate element including a substrate including at least one layer of metal pad deposited thereon, in which at least one thin layer of solder is deposited onto the layer of a metal pad and then a reflow process is performed; and (ii) a step of further depositing a bump of solder with an appropriate thickness on the substrate element. In the method, a thin intermetallic compound is formed by the reaction of the thin solder layer and the metal in the metal pad after appropriate heat treatment to the thin solder layer. By the formation of a thin intermetallic compound, the growth of the intermetallic compound can be slowed and the transformation of the intermetallic compound can be prevented. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013038418(A) |
申请公布日期 |
2013.02.21 |
申请号 |
JP20120163896 |
申请日期 |
2012.07.24 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
CHI CHEN;KIM NING TSU;HSIAO HSIANG-YAO |
分类号 |
H01L21/60;B23K1/00;B23K1/20;B23K101/40;B23K103/12 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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