| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP, which is capable of achieving both high uniformity and a high polishing speed in chemical mechanical polishing (CMP) of a silicon oxide film, and to provide a polishing method using the same. <P>SOLUTION: The polishing liquid for CMP contains abrasive grains, a first additive, a second additive, and water. An organic compound satisfying predetermined conditions is blended as the first additive, and a saturated monocarboxylic acid is blended as the second additive. The method for polishing a substrate having a silicon oxide film on a surface thereof comprises a step of polishing the silicon oxide film by a polishing pad while supplying the polishing liquid for CMP between the silicon oxide film and the polishing pad. <P>COPYRIGHT: (C)2013,JPO&INPIT |
