发明名称 Method of manufacturing a substrate structure
摘要 A substrate structure is provided. The substrate structure includes a substrate, a first insulation layer, a conductive part, a second insulation layer, a seed layer and a conductive layer. The substrate has a first circuit pattern layer and a second circuit pattern layer, which are located on two opposite surfaces of the substrate respectively. The first insulation layer formed on the first circuit pattern layer has a first insulation hole, which exposes a first opening in the outer surface of the first insulation layer. The conductive part formed on the first insulation hole for electrically connecting with a chip is enclosed by the edge of the first opening. The second insulation layer formed on the second circuit pattern layer has a second insulation hole in which the seed layer is formed. The conductive layer is formed on the seed layer for electrically connecting with a circuit board.
申请公布号 US8377506(B2) 申请公布日期 2013.02.19
申请号 US20090574350 申请日期 2009.10.06
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC.;LEE CHIH-CHENG 发明人 LEE CHIH-CHENG
分类号 B05D5/12;C23C14/00;C25D5/02 主分类号 B05D5/12
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