发明名称 |
FILM FORMING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, FILM FORMING APPARATUS, AND SEMICONDUCTOR DEVICE |
摘要 |
Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.
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申请公布号 |
US2013037873(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201213571559 |
申请日期 |
2012.08.10 |
申请人 |
TOKYO ELECTRON LIMITED;SUZUKI KEISUKE;KADONAGA KENTARO;MOROZUMI YUICHIRO |
发明人 |
SUZUKI KEISUKE;KADONAGA KENTARO;MOROZUMI YUICHIRO |
分类号 |
H01L21/02;C23C16/34;C23C16/50;H01L27/06 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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