发明名称 Data Storage for Voltage Domain Crossings
摘要 According to an embodiment, an apparatus includes a data storage device. Data to be stored in the data storage device is level shifted from a first voltage domain to a second voltage domain prior to being stored within the data storage device. The data storage device is powered by the second voltage domain. The apparatus further includes a circuit that is powered by the second voltage domain and that is responsive to data output by the data storage device.
申请公布号 US2013039133(A1) 申请公布日期 2013.02.14
申请号 US201113208450 申请日期 2011.08.12
申请人 QUALCOMM INCORPORATED;KOOB CHRISTOPHER EDWARD;LIN JEN TSUNG;PYLA MANOJKUMAR;SAINT-LAURENT MARTIN 发明人 KOOB CHRISTOPHER EDWARD;LIN JEN TSUNG;PYLA MANOJKUMAR;SAINT-LAURENT MARTIN
分类号 G11C5/14 主分类号 G11C5/14
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