发明名称 |
Data Storage for Voltage Domain Crossings |
摘要 |
According to an embodiment, an apparatus includes a data storage device. Data to be stored in the data storage device is level shifted from a first voltage domain to a second voltage domain prior to being stored within the data storage device. The data storage device is powered by the second voltage domain. The apparatus further includes a circuit that is powered by the second voltage domain and that is responsive to data output by the data storage device.
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申请公布号 |
US2013039133(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201113208450 |
申请日期 |
2011.08.12 |
申请人 |
QUALCOMM INCORPORATED;KOOB CHRISTOPHER EDWARD;LIN JEN TSUNG;PYLA MANOJKUMAR;SAINT-LAURENT MARTIN |
发明人 |
KOOB CHRISTOPHER EDWARD;LIN JEN TSUNG;PYLA MANOJKUMAR;SAINT-LAURENT MARTIN |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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