发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle &thetas;1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle &thetas;2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.
|
申请公布号 |
US8373164(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US20090613769 |
申请日期 |
2009.11.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI SHUNPEI;AKIMOTO KENGO;KAWAE DAISUKE |
发明人 |
YAMAZAKI SHUNPEI;AKIMOTO KENGO;KAWAE DAISUKE |
分类号 |
H01L29/04;H01L21/00;H01L29/10;H01L31/00 |
主分类号 |
H01L29/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|