| 摘要 |
PURPOSE: A TFT(Thin Film Transistor) substrate and a manufacturing method thereof are provided to manufacture a TFT array substrate by using five masks. CONSTITUTION: A gate insulating film is formed on a gate line, a gate electrode(110), and a common line. A cross shaped oxide semiconductor layer(130) is formed on the gate insulating film. An etch stopper(140) exposes both side surfaces of the cross shaped oxide semiconductor layer. A source electrode(160a) and a drain electrode(160b) are formed at the both side surfaces of the exposed oxide semiconductor layer. A passivation film is formed on the gate insulating film. A plurality of pixel electrodes(180a) and a plurality of common electrodes(180b) are formed on the passivation layer. |
