发明名称 |
III-NITRIDE METAL INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR |
摘要 |
A field effect transistor (FET) includes a Ill-Nitride channel layer, a III -Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the Ill-Nitride layers, a drain electrode electrically coupled to one of the Ill- Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III- Nitride layers. |
申请公布号 |
WO2013019329(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
WO2012US43114 |
申请日期 |
2012.06.19 |
申请人 |
HRL LABORATORIES, LLC;CHU, RONGMING;BROWN, DAVID F.;CHEN, XU;WILLIAMS, ADAM J.;BOUTROS, KARIM S. |
发明人 |
CHU, RONGMING;BROWN, DAVID F.;CHEN, XU;WILLIAMS, ADAM J.;BOUTROS, KARIM S. |
分类号 |
H01L29/772;H01L21/335 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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