| 摘要 |
This disclosure provides systems and methods for forming a metal thin film shield over a thin film cap to protect electromechanical systems devices in a cavity beneath. In one aspect, a dual or multi layer thin film structure is used to seal a electromechanical device. For example, a metal thin film shield can be mated over an oxide thin film cap to encapsulate the electromechanical device and prevent degradation due to wafer thinning, dicing and package assembly induced stresses, thereby strengthening the survivability of the electromechanical device in the encapsulated cavity. During redistribution layer processing, a metal thin film shield, such as a copper layer, is formed over the wafer surface, patterned and metalized. |
