| 摘要 |
<P>PROBLEM TO BE SOLVED: To inject dopant into a deep region for activation, without requiring an implanter of ion with high energy, nor increase of thermal load, when manufacturing a semiconductor. <P>SOLUTION: The method of manufacturing a semiconductor device includes a first step for slightly injecting a dopant in a surface layer of a semiconductor, and a second step for collective treatment of deep injection of the dopant into a melting depth and activation in liquid phase by allowing the surface layer to be melted deeper than the injection region of the dopant so that the dopant is dispersed in liquid phase down to the depth of the melting. The deep injection by melting dispersion and activation treatment thereof in the second step are performed by compound radiation in which continuous laser light is relatively scanned and radiated on the semiconductor surface for assist heating while pulse laser light is relatively scanned and repeatedly radiated in duplicated manner, thereby the dopant is dispersed in a deep region under a low thermal load, being activated at the same time. <P>COPYRIGHT: (C)2013,JPO&INPIT |
