发明名称 |
Flash memory cell with a flair gate |
摘要 |
An embodiment of the present invention is directed to a method of forming a memory cell. The method includes etching a trench in a substrate and filling the trench with an oxide to form a shallow trench isolation (STI) region. A portion of an active region of the substrate that comes in contact with the STI region forms a bitline-STI edge. The method further includes forming a gate structure over the active region of the substrate and over the STI region. The gate structure has a first width substantially over the center of the active region of the substrate and a second width substantially over the bitline-STI edge, and the second width is greater than the first width.
|
申请公布号 |
US8367537(B2) |
申请公布日期 |
2013.02.05 |
申请号 |
US20070801823 |
申请日期 |
2007.05.10 |
申请人 |
SPANSION LLC;DING MENG;SUH YOUSEOK;FANG SHENQING;CHANG KUO-TUNG |
发明人 |
DING MENG;SUH YOUSEOK;FANG SHENQING;CHANG KUO-TUNG |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|