| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR LAYER AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor layer having high photoelectric conversion efficiency, and a photoelectric conversion device using the same. <P>SOLUTION: A method for manufacturing the semiconductor layer is characterized in that a film containing a metal element is heated in a first atmosphere containing chalcogen vapor and is then heated in a second atmosphere containing hydrogen chalcogenide, thereby forming the film into a semiconductor layer containing metal chalcogenide. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013021231(A) |
申请公布日期 |
2013.01.31 |
| 申请号 |
JP20110154943 |
申请日期 |
2011.07.13 |
| 申请人 |
KYOCERA CORP |
发明人 |
MIYAMICHI YUSUKE;KAMATA RUI;DOMOTO TATSUYA;MATSUOKA RYO;ASANO YUJI |
| 分类号 |
H01L21/363;H01L21/368;H01L31/04 |
主分类号 |
H01L21/363 |
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