| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus and a vapor phase growth method which inhibit the deterioration of heaters heating a substrate and prevent the reduction of the heaters' lives. <P>SOLUTION: A susceptor 102 on which a silicon wafer 101 is placed is supported by an upper part of a cylinder part 104a of a rotation part 104. An in heater 120 and an out heater 121 are disposed in a P<SB POS="POST">2</SB>region in the cylinder part 104a as heaters heating the silicon wafer 101 from the lower side. A purge gas is supplied from a gas introduction tube 111 to the P<SB POS="POST">2</SB>region. Further, when the silicon wafer 101 is brought up from a predetermined position on the susceptor 102 and is positioned above the rotation part 104, the flow rate of the purge gas is increased. <P>COPYRIGHT: (C)2013,JPO&INPIT |
