| 摘要 |
A transmission gate is arranged between a current source and a resistive memory element, a PMOS gate of the transmission gate has no source loading effect and a write current passes from the current source, and in a first direction through the resistive memory element, setting the resistive memory element to a magnetization state. An NMOS gate of the of the transmission gate has no source loading effect and another write current, passes through the resistive memory element, in a second direction opposite the first direction, and through the transmission gate, setting the resistive memory element to an opposite magnetization state.
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