发明名称 Semiconductor device having plurality of wiring layers and designing method thereof
摘要 A semiconductor device includes first and second wirings formed in a first wiring layer and extending parallel to an X direction, third and fourth wirings formed in a third wiring layer and extending parallel to a Y direction; fifth and sixth wirings formed in a second wiring layer positioned between the first and second wiring layers, a first contact conductor that connects the first wiring to the third wiring; and a second contact conductor that connects the second wiring to the fourth wiring. The first and second contact conductors are arranged in the X direction. According to the present invention, because the first and second contact conductors that connect wiring layers that are two or more layers apart are arranged in one direction, a prohibited area that is formed in the second wiring layer can be made narrower. Therefore, the flexibility of the layout of the second wiring layer is enhanced and the restriction on the wiring density can be relaxed.
申请公布号 US8362616(B2) 申请公布日期 2013.01.29
申请号 US20100819639 申请日期 2010.06.21
申请人 ELPIDA MEMORY, INC.;YASUMORI KOJI;NAGAMINE HISAYUKI 发明人 YASUMORI KOJI;NAGAMINE HISAYUKI
分类号 H01L23/528 主分类号 H01L23/528
代理机构 代理人
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