发明名称 |
Thick nitride semiconductor structures with interlayer structures |
摘要 |
A semiconductor structure includes a substrate, a nucleation layer on the substrate, a compositionally graded layer on the nucleation layer, and a layer of a nitride semiconductor material on the compositionally graded layer. The layer of nitride semiconductor material includes a plurality of substantially relaxed nitride interlayers spaced apart within the layer of nitride semiconductor material. The substantially relaxed nitride interlayers include aluminum and gallium and are conductively doped with an n-type dopant, and the layer of nitride semiconductor material including the plurality of nitride interlayers has a total thickness of at least about 2.0 μm.
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申请公布号 |
US8362503(B2) |
申请公布日期 |
2013.01.29 |
申请号 |
US20070716319 |
申请日期 |
2007.03.09 |
申请人 |
CREE, INC.;SAXLER ADAM WILLIAM;BURK, JR. ALBERT AUGUSTUS |
发明人 |
SAXLER ADAM WILLIAM;BURK, JR. ALBERT AUGUSTUS |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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