CLEANING METHOD, PROCESSING DEVICE, AND STORAGE MEDIUM

摘要

[Problem] To easily remove such deposits as particles that have adhered to a surface of a treated object while preventing damage to the treated object such as collapsing of a pattern that has been formed on the surface of the treated object and roughening of a film that has been formed on the surface of the treated object. [Solution] As a pretreatment, hydrofluoric vapor is supplied to a wafer (W) to dissolve a natural oxide film (11) formed on a surface of the wafer (W) in order to have deposits (10), which have adhered to the surface of the natural oxide film (11), float from the surface of the wafer. Subsequently, a carbon dioxide gas, which is unreactive with a base film (12), is supplied from a region having a pressure higher than the atmosphere in which the wafer (W) is placed, and gas clusters are formed as the gas is cooled down to the condensation temperature or lower due to adiabatic expansion. Then, the deposits (10) are removed by irradiating the wafer (W) with the gas clusters in a non-ionic state.