发明名称 NANOSTRUCTURE PRODUCTION METHOD AND DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of forming a nanostructure or nanomaterial at low substrate temperature. <P>SOLUTION: The method includes the steps of: providing a thermal control barrier on a substrate as a substantially continuous layer; providing gas plasma; providing a gas plasma; preceeding additional heating to thermal control barrier from an upper side of the layer by a heat source which is different from the gas plasma; and forming a nanostructure or nanomaterial on the layer of the substrate by the plasma chemical vapor deposition method using the gas plasma while additionally heating. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013014507(A) 申请公布日期 2013.01.24
申请号 JP20120167487 申请日期 2012.07.27
申请人 SURREY NANOSYSTEMS LTD 发明人 SILVA SEMBUKUTIARACHILAGE RAVI;JENSEN BEN POUL;CHEN GAUN YOW
分类号 C01B31/02;B82Y40/00;C23C16/46;H01L21/205;H05H1/46 主分类号 C01B31/02
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