发明名称 |
NANOSTRUCTURE PRODUCTION METHOD AND DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a nanostructure or nanomaterial at low substrate temperature. <P>SOLUTION: The method includes the steps of: providing a thermal control barrier on a substrate as a substantially continuous layer; providing gas plasma; providing a gas plasma; preceeding additional heating to thermal control barrier from an upper side of the layer by a heat source which is different from the gas plasma; and forming a nanostructure or nanomaterial on the layer of the substrate by the plasma chemical vapor deposition method using the gas plasma while additionally heating. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013014507(A) |
申请公布日期 |
2013.01.24 |
申请号 |
JP20120167487 |
申请日期 |
2012.07.27 |
申请人 |
SURREY NANOSYSTEMS LTD |
发明人 |
SILVA SEMBUKUTIARACHILAGE RAVI;JENSEN BEN POUL;CHEN GAUN YOW |
分类号 |
C01B31/02;B82Y40/00;C23C16/46;H01L21/205;H05H1/46 |
主分类号 |
C01B31/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|