SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING RADIATION RESISTANCE BY SUPERLATTICE STRUCTURE AND ITS OPERATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that can be stably operated even under a severe irradiation environment of radiation ray such as the vicinity of a nuclear reactor or a nuclear fusion reactor, and to provide its operation method. SOLUTION: The silicon carbide semiconductor device is composed so as to inhibit penetration of a radiation into the device by reflecting and dispersing the radiation emitted from the outside on a large number of interfaces in an insulating film, while making the insulating film such as a surface protection film formed on a silicon carbide epitaxial film and an interlayer insulating film as a superlattice multilayer structure such as a multilayer film in which an SiO2film and an SiN film are alternately laminated. COPYRIGHT: (C)2007,JPO&INPIT