| 摘要 |
<p>An object of the invention is to reduce distance between each pair of adjacent insulating gate portions and thereby miniaturize a semiconductor device. A drift region is provided on a semiconductor substrate; first well regions are provided in upper part of the drift region; and source regions are provided in upper part of the first well regions. Each insulating gate portion forms a channel (a inversion layer) in part of the first well region located between the drift region and source region. A first main electrode forms junctions with part of the drift region exposed in the major surface to constitute unipolar diodes and is connected to the first well regions and the source regions. The plurality of insulating gate portions have linear patterns parallel to each other when viewed in the normal direction of the major surface. Between each pair of adjacent insulating gate portions, junction portions in which the first main electrode forms junctions with the drift region and the first well regions are arranged along the direction that the insulating gate portions extend. The channels are formed at least in the normal direction of the major surface.</p> |
