| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of an MOSFET in which a guard ring is provided on a substrate surface of an element region end part, a gate connection polysilicon layer is provided on the guard ring, and further a gate metal wiring layer is formed over it, in that, in the case of a pattern in which the gate metal wiring layer is separated, not being a ring, to have two end parts, a region is generated above the guard ring in which none of gate metal wiring layer, source electrode, and gate connection polysilicon layer is arranged, resulting in failure in voltage resistance or leakage current. <P>SOLUTION: In a region where neither the gate metal wiring layer nor source electrode is arranged on the guard ring, the gate connection polysilicon layer is expanded to entirely cover the guard ring. The expanded gate connection polysilicon layer acts as a field plate, to prevent occurrence of defective voltage resistance or leaking of current. <P>COPYRIGHT: (C)2013,JPO&INPIT |
