VAPOR PHASE GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a vapor phase growth device which effectively removes oxygen in a material gas and thereby obtaining an epitaxial film having a low oxygen concentration.

SOLUTION: A vapor phase growth device 10 has: a material gas supply part 3 supplying a material gas; a reaction chamber 2 connecting with the material gas supply part and used for forming a film on a substrate using the material gas; and oxygen removal means 1. The oxygen removal means 1 is provided in at least one of the material gas supply part 3 and the reaction chamber 2 and removes oxygen from the material gas using a solid electrolyte 6.

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