Semiconductor component comprising a polycrystalline semiconductor layer

摘要

The component has a polycrystalline layer (6) formed on a part of upper surfaces (3, 4) of a substrate (1), where the layer is made of a semiconductor material. The layer has a set of crystalline germinations (8) e.g. germanium or silicium particles. The material of the substrate is dimensionally stable with temperatures between 800 degree Celsius and 900 degree Celsius. The substrate is formed from a textile area-measured material and made of stainless steel, glass or carbon. A diffusions barrier layer (5) made of molybdenum is provided between the substrate and the polycrystalline layer. An independent claim is also included for a method for manufacturing a semiconductor component.